| 전자부품 데이터시트 검색엔진 |
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STPS40L15C 데이터시트(PDF) 3 Page - STMicroelectronics |
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STPS40L15C 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() STPS40L15C Characteristics Doc ID 4926 Rev 6 3/8 Figure 1. Average forward power dissipation versus average forward current (per diode) Figure 2. Average forward current versus ambient temperature ( δ = 1, per diode) 0 2 4 6 8 1012 1416182022 0 1 2 3 4 5 6 7 8 PF(av)(W) IF(av) (A) δ = 1 δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.05 T δ=tp/T tp 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 22 Tamb(°C) IF(av)(A) Rth(j-a)=15°C/W Rth(j-a)=Rth(j-c) T δ=tp/T tp Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 P(tp) P (1µs) ARM ARM t (µs) p 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 P(T ) P (25 °C) ARM j ARM T (°C) j Figure 5. Non repetitive surge peak forward current versus overload duration (maximum values per diode) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration (per diode) 1E-3 1E-2 1E-1 1E+0 0 50 100 150 200 250 t(s) IM(A) Tc=50°C Tc=75°C Tc=110°C IM t δ=0.5 1.0E-4 1.0E-3 1.0E-2 1.0E-1 1.0E+0 0.0 0.2 0.4 0.6 0.8 1.0 tp (s) Zth(j-c)/Rth(j-c) T δ=tp/T tp Single pulse δ = 0.5 δ = 0.2 δ = 0.1 |
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