STPS2170AF datasheet(2/8 Pages) STMICROELECTRONICS

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Characteristics

STPS2170

2/8

DocID027019 Rev1

Characteristics

To evaluate the conduction losses use the following equation:

P = 0.59 x IF(AV) + 0.04 x IF

(RMS)

Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

170

VRRM

Repetitive peak reverse voltage, Tj = -40 °C

160

IF(RMS)

Forward rms current

IF(AV)

Average forward current,

δ = 0.5, square wave SMAflat, T

L = 145 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

PARM

(1)

Repetitive peak avalanche power, square wave tp = 10 µs, Tj = 125 °C

165

Tstg

Storage temperature range

-65 to +175

°C

Operating junction temperature(2)

-40 to +175

°C

1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy measurements

and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible

avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche

specification”.

condition to avoid thermal runaway for a diode on its own heatsink

dP tot

dTj

---------------

Rth j

–

()

--------------------------

Table 3. Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-l)

Junction to lead, SMAflat

°C/W

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

2.8

µA

Tj = 125 °C

0.5

2.8

(2)

Forward voltage drop

Tj = 25 °C

IF = 2 A

0.82

Tj = 125 °C

0.62

0.67

Tj = 25 °C

IF = 4 A

0.89

Tj = 125 °C

0.70

0.75

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

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