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M24C32-DRMF3TP 데이터시트(PDF) 26 Page - STMicroelectronics |
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M24C32-DRMF3TP 데이터시트(HTML) 26 Page - STMicroelectronics |
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26 / 40 page ![]() DC and AC parameters M24C32-A125 26/40 DocID023377 Rev 6 8 DC and AC parameters This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. Table 6. Cycling performance by groups of four bytes Symbol Parameter Test condition Min. Max. Unit Ncycle Write cycle endurance(1) TA ≤ 25 °C, 1.8 V < VCC < 5.5 V - 4,000,000 Write cycle(2) TA = 85 °C, 1.8 V < VCC < 5.5 V - 1,200,000 TA = 125 °C, 1.8 V < VCC < 5.5 V - 600,000 1. The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N, 4*N+1, 4*N+2, 4*N+3] where N is an integer, or for the status register byte (refer also to Section 5.2: Cycling with Error Correction Code (ECC)). The Write cycle endurance is defined by characterization and qualification. 2. A Write cycle is executed when either a Page Write, a Byte Write, a Write Identification Page or a Lock Identification Page instruction is decoded. When using those Write instructions, refer also to Section 5.2: Cycling with Error Correction Code (ECC). Table 7. Operating conditions (voltage range R) Symbol Parameter Min. Max. Unit VCC Supply voltage 1.8 5.5 V TA Ambient operating temperature –40 125 °C Table 8. AC measurement conditions Symbol Parameter Min. Max. Unit Cbus Load capacitance 100 pF - SCL input rise/fall time, SDA input fall time - 50 ns - Input levels 0.2 VCC to 0.8 VCC V - Input and output timing reference levels 0.3 VCC to 0.7 VCC V |
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