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M93C76-DRE 데이터시트(PDF) 1 Page - STMicroelectronics |
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M93C76-DRE 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 32 page ![]() This is information on a product in full production. November 2015 DocID028496 Rev 1 1/32 M93Cx6-DRE 16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit (8-bit or 16-bit wide) MICROWIRE™ serial EEPROM 105 °C Operation Datasheet - production data SO8 (MN) 150 mil width TSSOP8 (DW) 169 mil width WFDFPN8 (MF) 2 x 3 mm Features • Industry standard MICROWIRE™ bus • Memory array: 1 Kb, 2 Kb, 4 Kb, 8 Kb or 16 Kb • Dual organization: by word (x16) or byte (x8) • Write – Byte within 4 ms – Word within 4 ms • READY/BUSY signal during programming • 2 MHz clock rate • Sequential read operation • Single supply voltage: 1.8 V to 5.5 V • Extended temperature range: -40 °C up to 105 °C • Enhanced ESD protection • Write cycle endurance – 4 million Write cycles at 25 °C – 1.2 million Write cycles at 85 °C – 900 k Write cycle at 105°C • Data retention – more than 50 years at 105 °C – 200 years at 55 °C • Packages – RoHS-compliant and Halogen-free (ECOPACK2®) Table 1. Device summary Reference Part number M93Cx6-DRE M93C46-DRE M93C56-DRE M93C66-DRE M93C76-DRE M93C86-DRE www.st.com |
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