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SPC574K72E5 데이터시트(PDF) 39 Page - STMicroelectronics |
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SPC574K72E5 데이터시트(HTML) 39 Page - STMicroelectronics |
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39 / 127 page ![]() DocID023601 Rev 5 39/127 SPC574Kxx Electrical characteristics 126 Table 19 shows the VERY STRONG configuration output buffer electrical characteristics. 3. CL is the sum of external capacitance. Device and package capacitances (CIN, defined in Table 14) are to be added to calculate total signal capacitance (CTOT = CL + CIN). 4. Transition time maximum value is approximated by the following formula: tTR_S(ns) = 4.5 ns + CL(pF) x 0.23 ns/pF. 5. Only for VDD_HV_IO_JTAG segment when VSIO[VSIO_IJ] = 0 or VDD_HV_IO_FLEX segment when VSIO[VSIO_IF] = 0 Table 19. VERY STRONG configuration output buffer electrical characteristics(1) Symbol C Parameter Conditions(2) Value(3) Unit Min Typ Max ROH_V CC P PMOS output impedance VERY STRONG configuration VDD_HV_IO = 5.0 V ± 10%, VSIO[VSIO_xx] = 1, IOH = 8 mA —— 60 CVDD_HV_IO = 3.3 V ± 10%, VSIO[VSIO_xx] = 0, IOH = 7 mA (4) —— 85 ROL_V CC P NMOS output impedance VERY STRONG configuration VDD_HV_IO = 5.0 V ± 10%, VSIO[VSIO_xx] = 1, IOL = 8 mA —— 60 CVDD_HV_IO = 3.3 V ± 10%, VSIO[VSIO_xx] = 0, IOL = 7 mA (4) —— 85 fMAX_V CC T Output frequency VERY STRONG configuration VDD_HV_IO = 5.0 V ± 10%, VSIO[VSIO_xx] = 1, CL = 25 pF (5) —— 50 MHz VDD_HV_IO = 3.3 V ± 10%, VSIO[VSIO_xx] = 1, CL = 15 pF (4),(5) —— 50 tTR_V CC T 10–90% threshold transition time output pin VERY STRONG configuration VDD_HV_IO = 5.0 V ± 10%, VSIO[VSIO_xx] = 1, CL = 25 pF (5) 1— 5.3 ns VDD_HV_IO = 5.0 V ± 10%, VSIO[VSIO_xx] = 1, CL = 50 pF (5) 2.5 — 12 VDD_HV_IO = 5.0 V ± 10%, VSIO[VSIO_xx] = 1, CL = 200 pF (5) 11 — 45 tTR20-80 CC D 20–80% threshold transition time(6) output pin VERY STRONG configuration VDD_HV_IO = 5.0 V ± 10%, VSIO[VSIO_xx] = 1, CL = 25 pF (5) 0.8 — 4 ns VDD_HV_IO = 3.3 V ± 10%, CL = 15 pF (5) 1—5 tTRTTL CC D TTL threshold transition time(7) for output pin in VERY STRONG configuration VDD_HV_IO = 3.3 V ± 10%, CL = 25 pF (5) 1—5 ns |
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