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STH320N4F6-2 데이터시트(PDF) 3 Page - STMicroelectronics |
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STH320N4F6-2 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 19 page ![]() STH320N4F6-2, STH320N4F6-6 Electrical ratings Doc ID 024221 Rev 1 3/19 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ± 20 V ID (1) 1. The value is rated according Rthj-c, current limited by package. Drain current (continuous) at TC = 25 °C 200 A ID (1) Drain current (continuous) at TC = 100 °C 200 A IDM (2) 2. Pulse is rated according SOA. Drain current (pulsed) 800 A PTOT Total dissipation at TC = 25 °C, 300 W Derating factor 2 W/°C IAV Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 160 A EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAV, VDD=35 V) 1100 mJ Tstg Storage temperature -55 to 175 °C Tj Operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.5 °C/W Rthj-pcb (1) 1. When mounted on 1 inch2 FR-4 2 oz Cu. Thermal resistance junction-pcb max 35 °C/W |
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