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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STL42P6LLF6 데이터시트(PDF) 1 Page - STMicroelectronics |
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STL42P6LLF6 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 14 page  February 2015 DocID025457 Rev 3 1/14 This is information on a product in full production. www.st.com STL42P6LLF6 P- channel 60 V, 0.023 Ω typ., 42 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STL42P6LLF6 60 V 0.026 Ω @ 10 V 42 A • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. Table 1: Device summary Order code Marking Package Packaging STL42P6LLF6 42P6LLF6 PowerFLAT™ 5x6 Tape and reel 1 2 3 4 PowerFLAT™ 5x6 AM01475v4 D(5, 6, 7, 8) G(4) S(1, 2, 3) |
유사한 부품 번호 - STL42P6LLF6 |
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유사한 설명 - STL42P6LLF6 |
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