STM32F756VG datasheet(112/228 Pages) STMICROELECTRONICS

112 / 228 page

Electrical characteristics

STM32F756xx

112/228

DocID027589 Rev 4

Table 32. Typical and maximum current consumptions in Standby mode

Symbol

Parameter

Conditions

Typ(1)

Max(2)

Unit

TA = 25 °C

TA =

25 °C

TA =

85 °C

TA =

105 °C

VDD =

1.7 V

VDD=

2.4 V

VDD =

3.3 V

VDD = 3.3 V

IDD_STBY

Supply current

in Standby

mode

Backup SRAM OFF, RTC and

LSE OFF

1.7

1.9

2.3

5(3)

15(3)

31(3)

µA

Backup SRAM ON, RTC and

LSE OFF

2.4

2.6

3.0

6(3)

20(3)

40(3)

Backup SRAM OFF, RTC ON

and LSE in low drive mode

2.1

2.4

2.9

Backup SRAM OFF, RTC ON

and LSE in medium low drive

mode

2.1

2.4

2.9

Backup SRAM OFF, RTC ON

and LSE in medium high drive

mode

2.2

2.5

3.0

Backup SRAM OFF, RTC ON

and LSE in high drive mode

2.3

2.6

3.1

Backup SRAM ON, RTC ON

and LSE in low drive mode

2.7

3.0

3.6

Backup SRAM ON, RTC ON

and LSE in Medium low drive

mode

2.7

3.0

3.6

Backup SRAM ON, RTC ON

and LSE in Medium high drive

mode

2.8

3.1

3.7

Backup SRAM ON, RTC ON

and LSE in High drive mode

2.9

3.2

3.8

1. PDR is OFF for VDD=1.7V. When the PDR is OFF (internal reset OFF), the typical current consumption is reduced by

additional 1.2 µA.

2. Guaranteed by characterization results.

3. Based on characterization, tested in production.

STM32F756VG 데이터시트(PDF) 112 Page - STMicroelectronics

STM32F756VG 데이터시트(HTML) 112 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

데이터시트 다운로드

링크 URL