STM32F756VG datasheet(113/228 Pages) STMICROELECTRONICS

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DocID027589 Rev 4

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STM32F756xx

Electrical characteristics

196

Table 33. Typical and maximum current consumptions in VBAT mode

Symbol

Parameter

Conditions(1)

Typ

Max(2)

Unit

TA =25 °C

TA =85 °C TA =105 °C

VBAT =

1.7 V

VBAT=

2.4 V

VBAT=

3.3 V

VBAT = 3.6 V

IDD_VBAT

Supply current

in VBAT mode

Backup SRAM OFF, RTC and

LSE OFF

0.03

0.04

0.2

0.4

µA

Backup SRAM ON, RTC and

LSE OFF

0.74

0.75

0.78

3.0

7.0

Backup SRAM OFF, RTC ON

and LSE in low drive mode

0.40

0.52

0.72

2.8

6.5

Backup SRAM OFF, RTC ON

and LSE in medium low drive

mode

0.40

0.52

0.72

2.8

6.5

Backup SRAM OFF, RTC ON

and LSE in medium high drive

mode

0.54

0.64

0.85

3.3

7.6

Backup SRAM OFF, RTC ON

and LSE in high drive mode

0.62

0.73

0.94

3.6

8.4

Backup SRAM ON, RTC ON and

LSE in low drive mode

1.06

1.18

1.41

5.4

12.7

Backup SRAM ON, RTC ON and

LSE in Medium low drive mode

1.16

1.28

1.51

5.8

13.6

Backup SRAM ON, RTC ON and

LSE in Medium high drive mode

1.18

1.3

1.54

5.9

13.8

Backup SRAM ON, RTC ON and

LSE in High drive mode

1.36

1.48

1.73

6.7

15.5

1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.

2. Guaranteed by characterization results.

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