STP12N50M2 datasheet(5/13 Pages) STMICROELECTRONICS

5 / 13 page

DocID026516 Rev 1

5/13

STP12N50M2

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

d(on)

Turn-on delay time

= 250 V, I

= 5 A,

= 4.7

Ω, V

= 10 V

(see

Figure 14 and 19)

13.5

Rise time

10.5

d(off)

Turn-off delay time

Fall time

34.5

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Source-drain current

SDM

(1)

Pulse width limited by safe operating area

Source-drain current (pulsed)

(2)

Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

= 0, I

= 10 A

1.6

Reverse recovery time

= 10 A, di/dt = 100 A/μs

= 60 V (see

Figure 16)

-276

Reverse recovery charge

2.4

μC

RRM

Reverse recovery current

17.5

Reverse recovery time

= 10 A, di/dt = 100 A/μs

= 60 V, T

=150 °C

(see

Figure 16)

-376

Reverse recovery charge

3.4

μC

RRM

Reverse recovery current

18.3

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