STPSC12H065 datasheet(2/8 Pages) STMICROELECTRONICS

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Characteristics

STPSC12H065

2/8

DocID024086 Rev 2

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.35 x IF(AV) + 0.096 x IF

(RMS)

Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

650

IF(RMS) Forward rms current

IF(AV)

Average forward current

Tc = 130 °C

(1), δ = 0.5

Value based on Rth(j-c) max.

IFSM

Surge non repetitive forward

current

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 125 °C

tp = 10 µs square, Tc = 25 °C

100

400

IFRM

Repetitive peak forward current

Tc = 130 °C

(1), T

j = 150 °C, δ = 0.1

Tstg

Storage temperature range

-55 to +175

°C

Operating junction temperature(2)

condition to avoid thermal runaway for a diode on its own heatsink

-40 to +175

°C

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

Typ.

Max.

Rth(j-c)

Junction to case

1.00

1.4

°C/W

Table 4. Static electrical characteristics

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

(1)

tp = 10 ms, δ < 2%

Reverse leakage current

Tj = 25 °C

VR = VRRM

-10

120

µA

Tj = 150 °C

100

500

(2)

tp = 500 µs, δ < 2%

Forward voltage drop

Tj = 25 °C

IF = 12 A

-1.56

1.75

Tj = 150 °C

1.98

2.5

Table 5. Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Typ.

Unit

Qcj

(1)

Most accurate value for the capacitive charge:

Total capacitive charge

VR = 400 V,

Total capacitance

VR = 0 V, Tc = 25 °C, F = 1 MHz

600

VR = 400 V, Tc = 25 °C, F = 1 MHz

dP tot

dTj

---------------

Rth j

–

()

--------------------------

Q =

cj(vR).dvR

∫

VOUT

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