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STTH30R02DJF 데이터시트(PDF) 3 Page - STMicroelectronics |
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STTH30R02DJF 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() STTH30R02DJF Characteristics Doc ID 022761 Rev 1 3/9 Table 5. Recovery characteristics Symbol Parameter Test conditions Min. Typ Max. Unit trr Reverse recovery time Tj = 25 °C IF = 1 A Vr = 30 V dIF/dt = 100 A/µs 27 35 ns IF = 1 A Vr = 30 V dIF/dt = 50 A/µs 38 50 IRM Reverse recovery current Tj = 125 °C IF = 30 A, dIF/dt = - 200 A/µs, VCC = 160 V 6.0 8.0 A Sfactor Reverse recovery softness factor 0.3 - Qrr Reverse recovery charges 140 nC Table 6. Turn-on switching characteristics Symbol Parameter Test conditions Min. Typ Max. Unit tfr Forward recovery time Tj = 25 °C IF = 30 A dIF/dt = 200 A/µs VFR = 1.3 V 300 ns VFP Forward recovery voltage 2.3 3.5 V Figure 1. Average forward power dissipation versus average forward current Figure 2. Forward voltage drop versus forward current PF(AV)(W) 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 δ=0.05 =0.1 =0.2 =0.5 =1 T δ=Tp/T tp IF(AV)(A) δ δ δ δ IFM(A) 0.1 1.0 10.0 100.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 Tj=150 °C (Maximum values) Tj=150 °C (Typical values) Tj=25 °C (Maximum values) VFM(V) |
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