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STGW30M65DF2 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STGW30M65DF2
상세설명  Trench gate field-stop IGBT, M series 650 V, 30 A low loss
PDF  19 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW30M65DF2 데이터시트(HTML) 5 Page - STMicroelectronics

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STGW30M65DF2, STGWA30M65DF2
Electrical characteristics
DocID027768 Rev 3
5/19
Table 6: IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay
time
VCE = 400 V, IC = 30 A, VGE = 15 V,
RG = 10 Ω (see Figure 29: " Test circuit for
inductive load switching" )
31.6
-
ns
tr
Current rise
time
13.4
-
ns
(di/dt)on
Turn-on
current slope
1791
-
A/µs
td(off)
Turn-off-delay
time
115
-
ns
tf
Current fall
time
110
-
ns
Eon
(1)
Turn-on
switching
losses
0.3
-
mJ
Eoff
(2)
Turn-off
switching
losses
0.96
-
mJ
Ets
Total switching
losses
1.26
-
mJ
td(on)
Turn-on delay
time
VCE = 400 V, IC = 30 A, VGE = 15 V,
RG = 10 Ω TJ = 175 °C (see Figure 29: "
Test circuit for inductive load switching" )
30
-
ns
tr
Current rise
time
17
-
ns
(di/dt)on
Turn-on
current slope
1435
-
A/µs
td(off)
Turn-off-delay
time
116
-
ns
tf
Current fall
time
194
-
ns
Eon
Turn-on
switching
losses
0.67
-
mJ
Eoff
Turn-off
switching
losses
1.36
-
mJ
Ets
Total switching
losses
2.03
-
mJ
tsc
Short-circuit
withstand time
VCC = 400 V, VGE = 13 V, TJstart = 150 °C
10
-
µs
VCC = 400 V, VGE = 15 V, TJstart = 150 °C
6
-
Notes:
(1)
Energy losses include reverse recovery of the diode.
(2)
Turn-off losses also include the tail of the collector current.



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