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STL100N8F7 데이터시트(PDF) 1 Page - STMicroelectronics |
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STL100N8F7 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() December 2015 DocID027058 Rev 3 1/14 This is information on a product in full production. www.st.com STL100N8F7 N- channel 80 V, 5.2 mΩ typ., 100 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on)max ID PTOT STL100N8F7 80 V 6.1 mΩ 100 A 120 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging STL100N8F7 100N8F7 PowerFLAT™ 5x6 Tape and reel |
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