| 전자부품 데이터시트 검색엔진 |
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ACT8941A 데이터시트(PDF) 21 Page - Active-Semi, Inc |
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ACT8941A 데이터시트(HTML) 21 Page - Active-Semi, Inc |
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21 / 42 page ![]() ACT8941A Rev 0, 12-Mar-13 - 21 - www.active-semi.com ActivePMU TM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. Copyright © 2013 Active-Semi, Inc. Innovative PowerTM Active-Semi Proprietary―For Authorized Recipients and Customers Push-Button Response (First Power-Up) (TA = 25°C, unless otherwise specified.) TYPICAL PERFORMANCE CHARACTERISTICS CONT’D CH1 CH2 CH3 CH1 CH2 CH3 CH1: VnPBIN, 2V/div CH2: VnPBSTAT, 2V/div CH3: VnRSTO, 2V/div TIME: 50ms/div nPBIN Resistor = 50kΩ 100 80 60 40 20 0 Output Current (mA) 1 10 100 1000 VOUT = 1.3V VIN = 3.6V VIN=5.0V VIN = 4.2V REG1 Efficiency vs. Output Current Output Current (mA) 1 10 100 1000 100 80 60 40 20 0 VOUT = 3.3V VIN = 3.6V VIN = 4.2V VIN = 5.0V REG2 Efficiency vs. Output Current CH1: VnPBIN, 2V/div CH2: OUT5, 1V/div CH3:VnRSTO , 5V/div TIME: 100ms/div nPBIN Resistor = 0Ω Warm Reset (Reset button pressed less than 130ms) Cold Reset (Reset button pressed longer than 130ms, less than 260ms) CH1 CH2 CH3 CH1: VnPBIN, 2V/div CH2: OUT5, 1V/div CH3:VnRSTO , 5V/div TIME: 100ms/div nPBIN Resistor = 0Ω Cold Reset (Reset button pressed longer than 260ms) CH1 CH2 CH3 CH1: VnPBIN, 2V/div CH2: OUT5, 1V/div CH3:VnRSTO , 5V/div TIME: 100ms/div nPBIN Resistor = 0Ω |
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