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STP100N8F6 데이터시트(PDF) 3 Page - STMicroelectronics |
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STP100N8F6 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() STP100N8F6 Electrical ratings DocID026838 Rev 3 3/15 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 100 A ID Drain current (continuous) at TC = 100 °C 70 A IDM(1) Drain current (pulsed) 400 A PTOT Total dissipation at TC = 25 °C 176 W EAS(2) Single pulse avalanche energy 170 mJ TJ Operating junction temperature range -55 to 175 °C Tstg Storage temperature range °C Notes: (1)Pulse width is limited by safe operating area. (2)Starting Tj = 25 °C, Id = 25 A, Vdd = 40 V. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max. 0.85 °C/W Rthj-amb Thermal resistance junction-ambient max. 62.5 °C/W |
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