STPSC12H065CT datasheet(2/8 Pages) STMICROELECTRONICS

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Characteristics

STPSC12H065C

2/8

DocID024809 Rev 3

Characteristics

When the diodes 1 and 2 are used simultaneously:

T

j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c)

To evaluate the conduction losses use the following equation:

P = 1.35 x IF(AV) + 0.192 x IF

(RMS)

Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

650

IF(RMS)

Forward rms current

IF(AV)

Average forward current

Tc = 135 °C

(1), DC

Per diode

Tc = 135 °C

(2), DC

Per device

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 125 °C

tp = 10 µs square, Tc = 25 °C

400

IFRM

Repetitive peak forward current

Tc = 135 °C

(1), T

j = 175 °C,  = 0.1

Tstg

Storage temperature range

-65 to +175

°C

Operating junction temperature(3)

-40 to +175

°C

Value based on Rth(j-c) max (per diode)

Value based on Rth(j-c) max (per device)

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

---------------

Rth j

–



--------------------------



Table 3. Thermal resistance parameters

Symbol

Parameter

Typ.

Max.

Unit

Rth(j-c)

Junction to case

Per diode

1.6

2.4

°C/W

Per device

0.875

1.275

Rth(c)

Coupling

0.15

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-5

µA

Tj = 150 °C

250

(2)

Forward voltage drop

Tj = 25 °C

IF = 6 A

1.56

1.75

Tj = 150 °C

1.98

2.5

tp = 10 ms,  < 2%

tp = 500 µs,  < 2%

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