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STTH1R04AY 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 STTH1R04AY
상세설명  Automotive ultrafast recovery diode
PDF  10 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STTH1R04AY 데이터시트(HTML) 4 Page - STMicroelectronics

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Characteristics
STTH1R04-Y
4/10
DocID024449 Rev 1
Figure 5. Junction capacitance versus
reverse voltage applied (typical values)
Figure 6. Reverse recovery charges versus
dIF/dt (typical values)
1
10
100
1
10
100
1000
C(pF)
F=1MHz
V
OSC=30mVRMS
T
j=25°C
VR(V)
0
4
8
12
16
20
24
28
32
36
40
10
100
1000
Q
RR(nC)
I
F= 1 A
V
R=320 V
T
j=125 °C
T
j=25 °C
dIF/dt(A/µs)
Figure 7. Reverse recovery time versus
dIF/dt (typical values)
Figure 8. Peak reverse recovery current versus
dIF/dt (typical values)
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
10
100
1000
t
RR(ns)
I
F= 1 A
V
R=320 V
T
j=125 °C
T
j=25 °C
dIF/dt(A/µs)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
10
100
1000
I
RM(A)
I
F= 1 A
V
R=320 V
T
j=125 °C
T
j=25 °C
dIF/dt(A/µs)
Figure 9. Relative variations of dynamic
parameters versus junction temperature
Figure 10. Transient peak forward voltage
versus dIF/dt (typical values)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
Q
RR;IRM [Tj]/ QRR;IRM [Tj=125°C]
I
RM
Q
RR
I
F= 1 A
V
R=320 V
Tj(°C)
Q
RR;IRM [Tj]/ QRR;IRM [Tj=125°C]
0
5
10
15
20
25
30
0
50
100
150
200
250
300
350
400
450
500
V
Fp(V)
I
F=1 A
T
j=125 °C
dIF/dt(A/µs)



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