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58N60DM2 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 58N60DM2
상세설명  Automotive-grade N-channel 600 V, 0.052 Ω typ., 50 A MDmesh™ DM2 Power MOSFET in a TO-247 package
PDF  12 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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58N60DM2 데이터시트(HTML) 5 Page - STMicroelectronics

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STW58N60DM2AG
Electrical characteristics
DocID027912 Rev 2
5/12
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain
current
-
50
A
ISDM
Source-drain
current
(pulsed)
-
200
A
VSD
(1)
Forward on
voltage
VGS = 0 V, ISD = 50 A
-
1.6
V
trr
Reverse
recovery time
ISD = 50 A, di/dt = 100 A/µs, VDD = 60 V
(see Figure 16: "Test circuit for inductive
load switching and diode recovery times")
-
140
ns
Qrr
Reverse
recovery
charge
-
0.7
µC
IRRM
Reverse
recovery
current
-
10.6
A
trr
Reverse
recovery time
ISD = 50 A, di/dt = 100 A/µs, VDD = 60 V,
Tj = 150 °C (see Figure 16: "Test circuit for
inductive load switching and diode
recovery times")
-
245
ns
Qrr
Reverse
recovery
charge
-
2.6
µC
IRRM
Reverse
recovery
current
-
21
A
Notes:
(1)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.



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