STW70N60DM2 datasheet(3/12 Pages) STMICROELECTRONICS

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STW70N60DM2

Electrical ratings

DocID026843 Rev 4

3/12

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

IDM(1)

Drain current (pulsed)

264

PTOT

Total dissipation at Tcase = 25 °C

446

dv/dt(2)

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

Tstg

Storage temperature

-55 to 150

°C

Operating junction temperature

Notes:

(1) Pulse width is limited by safe operating area.

(2) ISD ≤ 66 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.

(3) VDS ≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.28

°C/W

Rthj-amb

Thermal resistance junction-ambient

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (Pulse width limited by Tjmax)

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

1500

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