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PTF080451 데이터시트(PDF) 3 Page - Infineon Technologies AG

부품명 PTF080451
상세설명  LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz
PDF  9 Pages
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

PTF080451 데이터시트(HTML) 3 Page - Infineon Technologies AG

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Data Sheet
3 of 9
2004-06-24
PTF080451
Typical Performance (cont.)
All published data at TCASE = 25°C unless otherwise indicated.
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
VDD = 28 V, IDQ = 450 mA, f1 = 959 MHz, f2 = 960 MHz
-80
-70
-60
-50
-40
-30
-20
-10
0
36
38
40
42
44
46
48
Output Power (dBm ), PEP
3rd Order
7th
5th
14
15
16
17
18
860
880
900
920
940
960
Frequency (MHz)
40
50
60
70
80
Output Pow er
Efficiency
Gain
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
VDD = 28 V, IDQ = 450 mA
IM3 vs. Output Power at Selected Biases
VDD = 28 V, f1 = 959, f2 = 960 MHz
-60
-55
-50
-45
-40
-35
-30
-25
-20
36
38
40
42
44
46
Output Power (dBm), PEP
350 mA
550 mA
450 mA
Broadband Performance
VDD = 28 V, IDQ = 450 mA, POUT = 22.5 W
10
20
30
40
50
60
860
880
900
920
940
960
Frequency (MHz)
-20
-16
-12
-8
-4
0
Gain
Return Loss
Efficiency



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