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ACE2010M 데이터시트(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE2010M 데이터시트(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 5 page ![]() ACE2010M P-Channel -100V MOSFET VER 1.1 1 Description The ACE2010 miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low r DS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe DPAK saves board space • Fast switching speed • High performance trench technology Absolute Maximum Ratings Parameter Symbol Limit Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 Continuous Drain Current TC=25°C ID 11 A Pulsed Drain Current b IDM ±40 A Continuous Source Current (Diode Conduction) a IS -15 A Power Dissipation TC=25°C PD 50 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Unit Maximum Junction-to-Ambient a RθJA 50 °C/W Maximum Junction-to-Case RθJC 3.0 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature |
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