ACE4010M datasheet(3/7 Pages) ACE

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ACE4010M

N-Channel 100-V MOSFET

VER 1.1

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 uA

3.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = 20 V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 80 V, VGS = 0 V

VDS = 80V, VGS = 0 V, TJ = 55°C

On-State Drain Current

ID(on)

VDS = 5 V, VGS = 10 V

Drain-Source On-Resistance

rDS(on)

VGS = 10 V, ID = 10 A

mΩ

VGS = 4.5 V, ID = 9.2 A

Forward Transconductance

gfs

VDS = 15 V, ID = 10 A

Diode Forward Voltage

VSD

IS = 25 A, VGS = 0 V

0.89

Dynamic

Total Gate Charge

VDS = 50 V, VGS = 4.5 V, ID = 10 A

14.8

Gate-Source Charge

Qgs

4.3

Gate-Drain Charge

Qgd

8.6

Turn-On Delay Time

td(on)

VDD = 50 V, RL = 5 Ω , ID = 10 A,

VGEN = 10 V, RGEN = 6 Ω

4.8

Rise Time

14.2

Turn-Off Delay Time

td(off)

39.2

Fall Time

25.6

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f =1 MHz

1216

Output Capacitance

Coss

154

ReverseTransfer Capacitance

Crss

131

Note:

a. Pulse test: PW <= 300us duty cycle <= 2%.

b. Guaranteed by design, not subject to production testing.

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