| 전자부품 데이터시트 검색엔진 |
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SPD08P06P 데이터시트(PDF) 7 Page - Infineon Technologies AG |
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SPD08P06P 데이터시트(HTML) 7 Page - Infineon Technologies AG |
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7 / 9 page ![]() 1999-11-22 Page 7 SPD08P06P SPU08P06P Preliminary data Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = -6.2 A, VGS = -10 V -60 -20 20 60 100 140 °C 200 Tj 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 W 1.0 SPD08P06P typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS, ID = -250 µA -60 -20 20 60 100 °C 180 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 2% -60 -20 20 60 100 °C 180 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 typ -60 -20 20 60 100 °C 180 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 98% -60 -20 20 60 100 °C 180 Tj 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 -5 -10 -15 -20 -25 -30 V -40 VDS 1 10 2 10 3 10 pF Ciss Coss Crss Forward characteristics of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD -1 -10 0 -10 1 -10 2 -10 A SPD08P06P T j = 25 °C typ T j = 25 °C (98%) T j = 175 °C typ T j = 175 °C (98%) |
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