Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain-Source Breakdown Voltage

200

-

-

V

Static Drain-Source On-Resistance

-

-

170

mΩ

Gate Threshold Voltage

2

-

4

V

Forward Transconductance

-

9.5

-

S

Drain-Source Leakage Current

-

-

10

uA

-

-

250

uA

Gate-Source Leakage

-

-

+100

nA

Total Gate Charge

2

-

19

30

nC

Gate-Source Charge

-

5

-

nC

Gate-Drain ("Miller") Charge

-

6

-

nC

Turn-on Delay Time

2

-

9

-

ns

Rise Time

-

21

-

ns

Turn-off Delay Time

-25

-

ns

Fall Time

-

19

-

ns

Input Capacitance

-

1065

1700

pF

Output Capacitance

-

185

-

pF

Reverse Transfer Capacitance

f=1.0MHz

-

3

-

pF

Gate Resistance

f=1.0MHz

-

1.6

2.4

Ω

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Forward On Voltage

2

-

-

1.3

V

Reverse Recovery Time

-

180

-

ns

Reverse Recovery Charge

dI/dt=100A/µs

-

1150

-

nC

Notes:

1.Pulse width limited by Maximum junction temperature.

2.Pulse test

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2

3.Surface mounted on 1 in

AP18N20GS/P-HF