| 전자부품 데이터시트 검색엔진 |
|
AT90LS4433 데이터시트(PDF) 89 Page - ATMEL Corporation |
|
|
|||||||||||||||||||||||||||||
AT90LS4433 데이터시트(HTML) 89 Page - ATMEL Corporation |
|
89 / 126 page ![]() 89 AT90S/LS4433 1042H–AVR–04/03 G: Write Data High Byte 1. Set BS to “1”. This selects high data. 2. Give WR a negative pulse. This starts programming of the data byte. RDY/BSY goes low. 3. Wait until RDY/BSY goes high to program the next byte. (See Figure 64 for signal waveforms.) The loaded command and address are retained in the device during programming. For efficient programming, the following should be considered: • The command needs to be loaded only once when writing or reading multiple memory locations. • Address High Byte needs to be loaded only before programming a new 256-word page in the Flash. • Skip writing the data value $FF, that is, the contents of the entire Flash and EEPROM after a Chip Erase. These considerations also apply to EEPROM programming and Flash, EEPROM and signature bytes reading. Figure 63. Programming the Flash Waveforms $10 ADDR. HIGH ADDR. LOW DATA LOW DATA XA1 XA0 BS XTAL1 WR RDY/BSY RESET OE 12V |
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |