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54FCT533D 데이터시트(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
부품명 54FCT533D
상세설명  Octal Transparent Latch with TRI-STATE Outputs
PDF  6 Pages
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제조업체  NSC [National Semiconductor (TI)]
홈페이지  http://www.national.com
Logo NSC - National Semiconductor (TI)

54FCT533D 데이터시트(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)
−0.5V to +7.0V
DC Input Diode Current (I
IK)
V
I = −0.5V
−20 mA
V
I = VCC + 0.5V
+20 mA
DC Input Voltage (V
I)
−0.5V to V
CC + 0.5V
DC Output Diode Current (I
OK)
V
O = −0.5V
−20 mA
V
O = VCC + 0.5V
+20 mA
DC Output Voltage (V
O)
−0.5V to V
CC + 0.5V
DC Output Source
or Sink Current (I
O)
±50 mA
DC V
CC or Ground Current
per Output Pin (I
CC or IGND)
±50 mA
Storage Temperature (T
STG)
−65˚C to +150˚C
DC Latchup Source
or Sink Current
±300 mA
Junction Temperature (T
J)
CDIP
175˚C
Recommended Operating
Conditions
Supply Voltage (V
CC)
’FCT
4.5V to 5.5V
Input Voltage (V
I)
0VtoV
CC
Output Voltage (V
O)
0VtoV
CC
Operating Temperature (T
A)
54FCT
−55˚C to +125˚C
Note 1: Absolute maximum ratings are those values beyond which damage
to the device may occur. The databook specifications should be met, without
exception, to ensure that the system design is reliable over its power supply,
temperature, and output/input loading variables. National does not recom-
mend operation of FACT® circuits outside databook specifications.
DC Characteristics for ’FCT Family Devices
Symbol
Parameter
FCT541
Units
V
CC
Conditions
Min
Typ
Max
V
IH
Input HIGH Voltage
2.0
V
Recognized HIGH Signal
V
IL
Input LOW Voltage
0.8
V
Recognized LOW Signal
V
CD
Input Clamp Diode Voltage
−1.2
V
Min
I
IN = −18 mA
V
OH
Output HIGH Voltage
54FCT
4.3
V
Min
I
OH = −300 µA
54FCT
2.4
V
Min
I
OH = −12 mA
V
OL
Output LOW Voltage
54FCT
0.2
V
Min
I
OL = 300 µA
54FCT
0.5
V
Min
I
OL = 32 mA
I
IH
Input HIGH Current
5
µA
Max
V
IN = VCC
I
IL
Input LOW Current
−5
µA
Max
V
IN = 0.0V
I
OZH
Output Leakage Current
10
µA
Max
V
OUT = 5.5V; OEn = 2.0V
I
OZL
Output Leakage Current
−10
µA
Max
V
OUT = 0.0V; OEn = 2.0V
I
OS
Output Short-Circuit Current
-60
mA
Max
V
OUT = 0.0V
I
CCQ
Quiescent Power
Supply Current
1.5
mA
Max
V
IN < 0.2V or VIN 5.3V, VCC =
5.5V
∆I
CC
Quiescent Power
Supply Current
2.0
mA
Max
V
I = VCC − 2.1V
I
CCD
Dynamic I
CC
0.4
mA/
MHz
Max
V
CC = 5.5V, Outputs Open,
One Bit Toggling, 50% Duty
Cycle, OE
n = GND
I
CC
Total Power Supply
Current
6.0
mA
Max
V
CC = 5.5V, Outputs Open, fI
= 10MHz, OE
n = GND, One
Bit Toggling, 50% Duty Cycle
Note 2: All outputs loaded; thresholds on input associated with output under test.
Note 3: Maximum test duration 2.0 ms, one output loaded at a time.
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