P4M datasheet(1/3 Pages) THINKISEMI

부품명	P4M

상세설명	2.0 Ampere Passivated Process Thyristor---Sensitive Gate SCR

PDF	3 Pages

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제조업체	THINKISEMI [Thinki Semiconductor Co., Ltd.]

홈페이지	http://www.thinkisemi.com

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DESCRIPTION:

MAIN FEATURES

Symbol

Value

Unit

IT(RMS)

2

A

IGT

≤200

μA

VTM

≤1.5

V

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40-150

℃

Operating junction temperature range

Tj

-40-110

℃

Repetitive peak off-state voltage

VDRM

600

V

Repetitive peak reverse voltage

VRRM

600

V

RMS on-state current

IT(RMS)

2

A

@

(TC=72℃)

Non repetitive surge peak on-state current

(tp=10ms)

ITSM

20

A

I

2t value for fusing (tp=10ms)

I

2t

2

A

2s

Critical rate of rise of on-state current

dI/dt

50

A

/μs

Peak gate current (tp=20

μs, Tj=110℃)

IGM

0.2

A

Peak gate power (tp=20

μs, Tj=110℃)

PGM

0.5

W

Average gate power dissipation(Tj=110℃)

PG(AV)

0.1

W

A(2)

K(1)

G(3)

RGK

ThinkiSemi 2P4M SCR with the parallel resistor

between Gate and Cathode are especially

recommended for use on straight hair, igniter,

anion generator etc..

Internal structure

TO-202 Pkg Outline

1

2

3

®

2P4M

Pb Free Plating Product

2P4M

2.0 Ampere Passivated Process Thyristor---Sensitive Gate SCR

Pb

http://www.thinkisemi.com/

Page 1/3

Rev.05

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P4M 데이터시트(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

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