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PE4152A-Z 데이터시트(PDF) 2 Page - Peregrine Semiconductor

부품명 PE4152A-Z
상세설명  Quad MOSFET array with integrated LO enable and bypass mode
PDF  20 Pages
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제조업체  PSEMI [Peregrine Semiconductor]
홈페이지  http://www.psemi.com
Logo PSEMI - Peregrine Semiconductor

PE4152A-Z 데이터시트(HTML) 2 Page - Peregrine Semiconductor

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PE4152
Quad MOSFET Mixer
Page 2
DOC-64061-3 – (02/2016)
www.psemi.com
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be
restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Recommended Operating Conditions
Table 2 lists the recommending operating conditions for the PE4152. Devices should not be operated outside
the recommended operating conditions listed below.
Table 1 • Absolute Maximum Ratings for PE4152
Parameter/Condition
Min
Max
Unit
Supply voltage, VDD
4.0
V
Maximum DC plus peak AC across drain-source
±3.3
V
Maximum DC current across drain-source
6mA
Maximum AC current across drain-source
36
mAP-P
Storage temperature range
–65
+150
°C
Operating junction temperature
+125
°C
ESD voltage HBM, all pins(*)
1000
V
Note: * Human body model (MIL-STD 883 Method 3015).
Table 2 • Recommended Operating Conditions for PE4152
Parameter
Min
Typ
Max
Unit
Supply voltage, VDD
2.9
3.1
V
Operating temperature range
–40
+85
°C
LO input power (LO enable)
–10
–6
dBm
LO input power (LO bypass)
23
dBm
RF input power (LO enable)
2dBm
RF input power (LO bypass)
2dBm



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