1

2

3

4

5

6

DRV

GND

VPC

TBLK

VSC

VDD

1

2

3

4

5

6

3

UCC24636

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SLUSCG2A – MARCH 2016 – REVISED MARCH 2016

Product Folder Links: UCC24636

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Copyright © 2016, Texas Instruments Incorporated

5 Device Comparison Table

PART NUMBER

CCM DEAD TIME CONTROL

UCC24636

No

4.35

130

UCC24630

Yes

2.5

200

(1)

P = Power, G = Ground, I = Input, O = Output, I/O = Input/Output

6 Pin Configuration and Functions

DBV Package

6-Pin SOT23

Top View

Pin Functions

PIN

DESCRIPTION

NO.

NAME

1

VPC

I

The Voltage during Primary Conduction pin is connected to a resistor divider from the SR MOSFET

drain. This pin determines a sample of the primary-side MOSFET volt seconds during the primary on-

time. This voltage programs a voltage controlled current source for the internal VPC ramp charging

current.

2

VSC

I

The Voltage during Secondary Conduction pin is connected to a resistor divider from the power-supply

output. This pin determines a sample of the secondary-side output voltage used to determine SR

MOSFET conduction time. This voltage programs a voltage controlled current source for the internal VSC

ramp charging current.

3

TBLK

–

TIME BLANK pin is used to select the blanking time of the VPC rising edge. A programmable range from

200 ns to 2 µs is available to prevent false detection of the primary on-time due to ringing during DCM

operation.

4

DRV

O

DRIVE is an output used to drive the gate of an external synchronous rectifier N-channel MOSFET

switching transistor, with source pin connected to GND.

5

GND

G

The GROUND pin is both the reference pin for the controller and the low-side return for the drive output.

Special care should be taken to return all AC decoupling capacitors as close as possible to this pin and

avoid any common trace length with analog signal return paths.

6

VDD

P

VDD is the bias supply input pin to the controller. A carefully placed bypass capacitor to GND is required

on this pin.