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AP70SL500AI 데이터시트(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP70SL500AI 데이터시트(HTML) 4 Page - Advanced Power Electronics Corp. |
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4 / 5 page ![]() AP70SL500AI 0.37Ω Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Total Power Dissipation Fig 12. Normalized BVDSS v.s. Junction Temperature 4 0.1 1 10 100 1000 10000 0 200 400 600 800 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0 2 4 6 8 10 12 0 1020 3040 Q G , Total Gate Charge (nC) I D =2A V DS =480V 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 1 10 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) T C =25 o C Single Pulse 10us 100us 1ms 10ms 100ms 1s DC Operation in this area limited by RDS(ON) 0 10 20 30 40 0 50 100 150 T C , Case Temperature ( o C ) 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 T j , Junction Temperature ( o C) I D =1mA . |
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