ACPDQC3V3T-HF datasheet(1/4 Pages) COMCHIP

부품명	ACPDQC3V3T-HF

상세설명	SMD ESD Protection Diode

PDF	4 Pages

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제조업체	COMCHIP [Comchip Technology]

홈페이지	http://www.comchiptech.com

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1 / 4 page

ACPDQC3V3T-HF

SMD ESD Protection Diode

Page 1

Features

- Bi-directional ESD protection.

- Surface mount package.

- Ultra small SMD package:0402

- High component density.

Mechanical data

- Case: 0402C/SOD-923 Standard package,

molded plastic.

- Terminals: Matte tin plated, solderable per

MIL-STD-750, method 2026.

- Mounting position: Any.

- Weight: 0.001 grams(approx.).

Comchip Technology CO., LTD.

REV:A

AQW-G7006

RoHS Device

Halogen Free

Comchip

S M D D i o d e S p e c i a l i s t

Company reserves the right to improve product design , functions and reliability without notice.

- IEC 61000-4-2 ±30kV(Contact).

- ESD Rating of Class 3 per Human Body Model.

- ESD Rating of Class 4

Machine Model.

per

Dimensions in inches and (millimeter)

0402C/SOD-923F

0.041(1.05)

0.037(0.95)

0.026(0.65)

0.022(0.55)

0.018(0.45)

0.012(0.30)

0.008(0.20)

0.018(0.45)

0.001(0.02)

Max.

Circuit diagram

-Comply with AEC-Q101

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Conditions

Peak pulse power

PPP

W

170

Operation temperature range

Tj

°C

Storage temperature range

TSTG

-55~+150

°C

ESD

kV

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

ESD capability

-40~+125

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

Breakdown voltage

VBR

V

IT = 1mA

3.6

Reverse leakage current

IR

uA

VRWM = 3.3V

0.5

Clamping voltage

VC

V

4.65

IPP = 1A, TP = 8/20us

V

Working peak reverse voltage

VRWM

3.3

Peak pulse current

IPP

A

TP = 8/20us

16

TP = 8/20us

±30

Junction capacitance

25

CJ

pF

VR = 0V, f = 1MHz

Electrical Characteristics (at TA=25°C unless otherwise noted)

4.2

20

<0.02

ESD

±30

4.6

IPP = 16A, TP = 8/20us

9.8

Clamping voltage

VCL

V

6

IPP = 5A, TP 100ns

=

IPP = 18A, TP = 100ns

8.75

Dynamic resistance

RDYN

Ω

0.18

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