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DMNH6012SPS 데이터시트(PDF) 5 Page - Diodes Incorporated

부품명 DMNH6012SPS
상세설명  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH6012SPS 데이터시트(HTML) 5 Page - Diodes Incorporated

  DMNH6012SPS Datasheet HTML 1Page - Diodes Incorporated DMNH6012SPS Datasheet HTML 2Page - Diodes Incorporated DMNH6012SPS Datasheet HTML 3Page - Diodes Incorporated DMNH6012SPS Datasheet HTML 4Page - Diodes Incorporated DMNH6012SPS Datasheet HTML 5Page - Diodes Incorporated DMNH6012SPS Datasheet HTML 6Page - Diodes Incorporated DMNH6012SPS Datasheet HTML 7Page - Diodes Incorporated DMNH6012SPS Datasheet HTML 8Page - Diodes Incorporated  
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DMNH6012SPS
Document number: DS38084 Rev. 3 - 2
5 of 8
www.diodes.com
April 2016
© Diodes Incorporated
DMNH6012SPS
0
0.005
0.01
0.015
0.02
0.025
0.03
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS=4.5V, ID=25A
V
GS=10V, ID=25A
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D=250μA
I
D=1mA
0.1
1
10
100
1000
10000
100000
0
10
20
30
40
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Drain-Source Leakage Current vs.
Voltage
25
℃
85
℃
125
℃
150
℃
175
℃
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
GS=0V,
T
A=-55℃
V
GS=0V,
T
A=25℃
V
GS=0V,
T
A=85℃
V
GS=0V, TA=125℃
V
GS=0V, TA=150℃
V
GS=0V, TA=175℃
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
Q
g (nC)
Figure 12. Gate Charge
V
DS=30V, ID=25A
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS, DRAIN-SOURCE VOLTAGE(V)
Figure 11. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss



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