CDBV220-G datasheet(1/4 Pages) COMCHIP

부품명	CDBV220-G

상세설명	SMD Schottky Barrier Diodes

PDF	4 Pages

Scroll/Zoom	100%

제조업체	COMCHIP [Comchip Technology]

홈페이지	http://www.comchiptech.com

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1 / 4 page

CDBV220-G

Forward current: 2.0A

Reverse voltage: 20V

RoHS Device

Features

- Low Forward Voltage Drop.

- Very Small SMD Package.

Mechanical Data

- Case: SOD-323, molded plastic.

- Terminals: Solderable per MIL-STD-750, method

2026.

- Polarity: Indicated by cathode end.

Dimensions in inches and (millimeter)

0.071 (1.80)

0.063 (1.60)

0.055 (1.40)

0.047 (1.20)

0.108 (2.75)

0.100 (2.55)

0.039 (1.00)

MAX.

0.014 (0.35)

0.010 (0.25)

0.019 (0.475)REF

0.006 (0.15)

0.004 (0.10)

SMD Schottky Barrier Diodes

0.003 (0.08)

Circuit Diagram

Parameter

Unit

Maximum Ratings (At Ta=25°C, unless otherwise noted)

Peak repetitive reverse voltage

Working peak reverse voltage

RMS reverse voltage

Continuous forward current

Non-repetitive peak forward surge current @ t=8.3ms

Power dissipation

Thermal resistance from junction to ambient

Junction temperature range

Symbol

VRRM

VRWM

VR(RMS)

IF

IFSM

PD

RθJA

TJ

20

2

9

250

480

400

-40 ~ +125

V

A

mW

°C/W

°C

Unit

Electrical Characteristics (At Ta=25°C, unless otherwise noted)

Reverse breakdown voltage

Reverse current

Forward voltage (Note 1)

Total capacitance

20

V

μA

pF

Conditions

VR = 4V, f = 1MHz

V(BR)

IR

VF

Ctot

100

120

IR = 1mA

VR = 10V

VR = 20V

IF = 1A

Storage temperature range

TSTG

-55 ~ +150

°C

V

0.45

0.55

IF = 2A

SOD-323

0.000 (0.00)

CDBV220-G

208

(Note 1)

(Note 2)

(Note 1)

(Note 2)

14

Note: (1) Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Note: (1)

300

≤

Pulse test: tp

≤

μs ; δ

0.02

80

Parameter

Max.

Symbol

Min.

(2) Device mounted on an FR4 PCB with copper pad 10 x 10 mm.

QW-BB050

Page 1

REV: A

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

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