DF2B36FU

2

4.

4.

4.

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

= 25

= 25

= 25





))))

Characteristics

Electrostatic discharge voltage (IEC61000-4-2)(Contact)

Electrostatic discharge voltage (IEC61000-4-2)(Air)

Electrostatic discharge voltage (ISO10605)(Contact)

Electrostatic discharge voltage (ISO10605)(Air)

Peak pulse power (tp = 8/20 µs)

Peak pulse current (tp = 8/20 µs)

Junction temperature

Storage temperature

Symbol

Note

(Note 1)

(Note 2)

(Note 3)

Rating

±20

±20

150

2.5

150

-55 to 150

Unit

kV

kV

W

A



Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: According to IEC61000-4-2.

Note 2: According to ISO10605. (@ C = 330 pF, R = 2 kΩ)

Note 3: According to IEC61000-4-5.

2016-03-25

Rev.1.0

©2016 Toshiba Corporation