Cascadable Amplifier

10 to 2000 MHz

Rev. V3

A35 / SMA35

1

1

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Parameter

Units

Typical

Guaranteed

25ºC

0º to 50ºC -54º to +85ºC*

Frequency

MHz

1-2050

10-2000

10-2000

Small Signal Gain (min)

dB

10.0

9.0

8.5

Gain Flatness (max)

dB

±0.3

±0.6

±0.8

Reverse Isolation

dB

16

Noise Figure (max)

dB

5.0

6.5

7.0

Power Output

@ 1 dB comp. (min)

dBm

9.0

7.0

6.5

IP3

dBm

+21

IP2

dBm

+33

Second Order Harmonic IP

dBm

+38

VSWR Input / Output (max)

1.5:1 / 1.5:1

2.0:1 / 2.2:1

2.2:1 / 2.2:1

DC Current @ 15 Volts (max)

mA

24

27

29

Features

 MEDIUM OUTPUT LEVEL +9 dBm (TYP.)

 WIDE POWER SUPPLY RANGE: +8 TO +20 VOLTS

Description

The A35 RF amplifier is a discrete thin film hybrid design,

which incorporates the use of thin film manufacturing

processes for accurate performance and high reliability.

This single stage bipolar transistor feedback amplifier design

displays impressive performance over a broadband frequency

range. An active DC biasing network is used for

temperature-stable performance, in addition to an RF Choke,

used for power supply decoupling.

Both TO-8 and Surface Mount packages are hermetically sealed,

and MIL-STD-883 environmental screening is available

.

Product Image

Ordering Information

Part Number

Package

A35

TO-8

SMA35

Surface Mount

CA35 **

SMA Connectorized

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Storage Temperature

-62ºC to +125ºC

Case Temperature

+125ºC

DC Voltage

+21 V

Continuous Input Power

+13 dBm

Short Term Input power

(1 minute max.)

50 mW

Peak Power (3 µsec max.)

0.5 W

“S” Series Burn-In

Temperature (case)

125ºC

Parameter

Rating

169ºC/W

0.189 W

Junction Temperature Rise

+32ºC

** The connectorized version is not RoHs compliant.