Cascadable Amplifier

20 to 250 MHz

Rev. V3

A82 / SMA82

1

1

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Parameter

Units

Typical

Guaranteed

25ºC

0º to 50ºC -54º to +85ºC*

Frequency

MHz

10-300

20-250

20-250

Small Signal Gain (min)

dB

25.0

24.0

23.5

Gain Flatness (max)

dB

±0.3

±0.7

±1.0

Reverse Isolation

dB

29

Noise Figure (max)

dB

2.8

3.5

4.0

Power Output

@ 1 dB comp. (min)

dBm

20.0

19.0

18.0

IP3

dBm

+31

IP2

dBm

+36

Second Order Harmonic IP

dBm

+42

VSWR Input / Output (max)

1.3:1 / 1.3:1

1.7:1 / 1.7:1

1.9:1 / 1.9:1

DC Current @ 15 Volts (max)

mA

50

52

54

Features

 HIGH REVERSE ISOLATION: >28.5 dB (TYP.)

 HIGH LEVEL OUTPUT: +20 dBm (TYP.)

 LOW NOISE: 2.8 dB (TYP.)

 HIGH GAIN: 24.5 dB (TYP.)

Description

The A82 RF amplifier is a discrete hybrid design, which uses

thin film manufacturing processes for accurate performance

and high reliability.

The 2 stage silicon bipolar feedback amplifier design displays

impressive performance over a broadband frequency range.

An isolation transformer is used in the feedback loop, with the

benefit of high reverse isolation.

Both TO-8 and Surface Mount packages are hermetically

sealed, and MIL-STD-883 environmental screening is available

.

Product Image

Ordering Information

Part Number

Package

A82

TO-8

SMA82

Surface Mount

CA82**

SMA Connectorized

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Storage Temperature

-62ºC to +125ºC

Case Temperature

+125ºC

DC Voltage

+17 V

Continuous Input Power

10 dBm

Short Term Input power

(1 minute max.)

50 mW

Peak Power (3 µsec max.)

0.5 W

“S” Series Burn-In

Temperature (case)

+125ºC

Parameter

Rating

144ºC/W

0.273 W

Junction Temperature Rise

39ºC

** The connectorized version is not RoHs compliant.