1

Cascadable Amplifier

10 to 500 MHz

Rev. V2

A511 / SMA511

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Parameter

Units

Typical

Guaranteed

25ºC

0º to 50ºC -54º to +85ºC*

Frequency

MHz

5-500

10-500

10-500

Small Signal Gain (min)

dB

17.0

16.0

15.5

Gain Flatness (max)

dB

±0.4

±0.8

±1.0

Reverse Isolation

dB

16

Noise Figure (max)

dB

3.4

4.2

4.7

Power Output

@ 1 dB comp. (min)

dBm

21.0

20.0

19.5

IP3

dBm

+33

IP2

dBm

+40

Second Order Harmonic IP

dBm

+46

VSWR Input / Output (max)

1.7:1 / 1.7:1

1.9:1 / 1.9:1

2.0:1 / 2.0:1

DC Current @ 15 Volts (max)

mA

52

56

58

Features

 HIGH POWER OUTPUT: +21 dBm (TYP.)

 HIGH THIRD ORDER IP3: +33 dBm (TYP.)

 HIGH EFFICIENCY: 52 mA (TYP.) @ +15 Vdc

 AVAILABLE IN BOTH TO-8 and SMTO-8 PACKAGES

Description

The A511 RF amplifier is a discrete hybrid design, which uses

thin film manufacturing processes for accurate performance and

high reliability.

This single stage bipolar transistor feedback amplifier design

displays impressive performance over a broadband frequency

range. Use of an impedance transformer offers the benefit of

high dynamic range and high efficiency.

Both TO-8 and Surface Mount packages are hermetically

sealed, and MIL-STD-883 environmental screening is available.

Product Image

Ordering Information

Part Number

Package

A511

TO-8

MAAM-008735-SMA511

Surface Mount

CA511

SMA Connectorized **

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Storage Temperature

-62ºC to +150ºC

Case Temperature

125ºC

DC Voltage

+17 V

Continuous Input Power

+13 dBm

Short Term Input power

(1 minute max.)

100 mW

Peak Power (3 µsec max.)

0.5 W

“S” Series Burn-In

Temperature (case)

125ºC

Parameter

Rating

143ºC/W

0.47 W

Junction Temperature Rise

68ºC

** The connectorized version is not RoHs compliant.