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DLSS13 데이터시트(PDF) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd

부품명 DLSS13
상세설명  SURFACE MOUNT SCHOTTKY
PDF  2 Pages
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제조업체  CHENDA [Microdiode Semiconductor (Shenzhen) Co., Ltd]
홈페이지  http://www.microdiode.com/en
Logo CHENDA - Microdiode Semiconductor (Shenzhen) Co., Ltd

DLSS13 데이터시트(HTML) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd

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SOLDERABLE ENDS
D2
D2=D1
+0
-0.20
0.5± 0.1
0.5± 0.1
4.9± 0.2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified
Maximum recurrent peak reverse voltage
V
RRM
V
Maximum RMS voltage
VRWS
V
Maximum DC blocking voltage
VDC
V
Maximum average forw ord rectified current at
c T
L(SEE FIG.1) (NOTE 2)
I(AV)
A
Peak forw ard surge current 8.3ms single half-
c sine-w ave superimposed on rated load(JEDEC
c Method)
IFSM
A
Maximum instantaneous forw ard voltage at
v 1.0A(NOTE.1)
VF
V
Maximum DC reverse current @T
A=25
oC
at rated DC blocking voltage(NOTE1) @T
A=100
oC
RθJA
RθJL
Operating junction and storagetemperature range
TSTG
oC
Storage temperature range
TJ
oC
0.5
45
15
I
R
NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle
DLSS12 THRU DLSS110
2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm2)copper pad areas
REVERSE VOLTAGE: 20 --- 100 VCURRENT: 1.0 A
Typical thermal resitance (NOTE2)
K
/W
DLSS12
DLSS13
DLSS14 DLSS16 DLSS18 DLSS110
mA
UNITS
20
30
40
60
80
100
DO - 213AB
14
21
28
42
63
70
20
30
40
60
80
100
30
1.0
-55--- +150
-55--- +150
0.5
0.7
0.79
5.0
Dimensions in millimeters
SURFACE MOUNT SCHOTTKY
MDD Catalog Number
FEATURES
MECHANICAL DATA
◇ Built-in strain relief
◇ C a s e :J E D E C D O -21 3AB ,m o l ded p l a s ti c o ver
1 11 1 pa ss iva ted c hip
◇ Low power loss,high effciency
◇ Plastic package has Underwriters Laborator
111 Flammability Classification 94V-0
◇ High temperature soldering guaranteed:250
o
C/10
1
11
seconds at terminals
◇ P o l a ri ty: C o l or band d e no tes c a thode end
◇ W eigh t: 0.0046 ounces, 0.116 gram
◇ Low profile package
◇
For surface mounted applications
◇ T e rm i nal s :S o l der P la ted, s olde rable per M IL -S T D -750,
1 11 1 M e th od 2026
◇ High current capability,low forward voltage drop
◇ For use in low voltage high frequency inverters,free
111 wheeling and polarity protection applications
◇ Guardring for overvoltage protection
◇ Metal silicon junction, majority carrier conduction
◇ High surge capability


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