GaAs SP6T 2.5 V High Power Switch

Dual / Tri / Quad-Band GSM Applications

V6

MASWSS009

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3

Parameter

Test Conditions

Units

Min.

Typ.

Max.

0.5 - 1 GHz

1 - 2 GHz

dB

dB

—

—

0.5

0.65

0.7

0.9

0.5 - 1 GHz

1 - 2 GHz

dB

dB

—

—

1.0

1.3

1.2

1.6

Tx to Rx Isolation

0.5 - 1 GHz

1 - 2 GHz

dB

dB

40

—

45

38

—

—

Tx to Tx Isolation

0.5 - 1 GHz

1 - 2 GHz

dB

dB

22

—

26

17

—

—

Return Loss

0.5 - 2.5 GHz

dB

—

20

—

Tx P0.1dB

1 GHz

dBm

—

41

—

Rx P1dB

1 GHz

dBm

—

25

—

2nd Harmonic

dBc

—

-78

-67

3rd Harmonic

dBc

—

-72

-67

Trise, Tfall

10% to 90% RF, 90% to 10% RF

μS

—

0.2

—

Ton, Toff

50% control to 90% RF,

and 50% control to 10% RF

μS

—

0.2

—

Transients

In Band

mV

—

70

—

Control Current

—

µA

—

20

80

3. External DC blocking capacitors are required on all RF ports.

4. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 100 pF for 0.5 GHz - 2.0 GHz.

Qualification

Qualified

to

MACOM

specification

REL-201,

Process Flow –2.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

devices.

Functional Schematic

Tx1

Tx2

VTx1

VTx2

ANT

VRxC

VRx1

Rx1

VRx2

Rx2

Rx3

Rx4

VRx3

VRx4

100pF

100pF

100pF

100pF

100pF

100pF

100pF

GND

GND