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BAS21 데이터시트(PDF) 1 Page - Yea Shin Technology Co., Ltd |
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BAS21 데이터시트(HTML) 1 Page - Yea Shin Technology Co., Ltd |
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1 / 3 page ![]() A S21C BA S21S MARKING:JS2 MARKING:JS3 MARKING:JS 4 SOT-23 250 400 200 1 50 -55~+150 BAS21/A/C/S FEATURES Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance BA S21 MARKING: JS Maximum Ratings @Ta=25 ℃ Parameter Symbol Limit Unit Repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR V Forward continuous current mA Average rectified output current mA A Repetitive peak forward surge current mA Power dissipation PD mW Thermal resistance junction to ambient RθJA ℃/W Junction temperature TJ ℃ Storage temperature range TSTG ℃ Forward Surge Current @t=8.3ms Non-Repetitive Peak IFM IO IFSM IFRM 555 225 625 2.5 ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Reverse breakdown voltage V(BR) IR= 100µA 250 V Reverse voltage leakage current IR VR=200V 0. 1 µA Forward voltage VF IF=100mA IF=200mA 1000 1250 mV Diode capacitance CD VR=0V, f=1MHz 5 pF Reveres recovery time trr IF=IR=30mA,Irr=0.1×IR,RL=100Ω 50 n s JS JS2 JS3 JS4 Switching Diode DATA SHEET SEMICONDUCTOR http://www.yeashin.com 1 REV.02 20140305 H BA S21 |
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