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1SS413CT 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 1SS413CT
상세설명  Schottky Barrier Diode Silicon Epitaxial
PDF  5 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

1SS413CT 데이터시트(HTML) 2 Page - Toshiba Semiconductor

  1SS413CT Datasheet HTML 1Page - Toshiba Semiconductor 1SS413CT Datasheet HTML 2Page - Toshiba Semiconductor 1SS413CT Datasheet HTML 3Page - Toshiba Semiconductor 1SS413CT Datasheet HTML 4Page - Toshiba Semiconductor 1SS413CT Datasheet HTML 5Page - Toshiba Semiconductor  
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1SS413CT
2
5.
5.
5.
5. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Forward voltage
Forward voltage
Forward voltage
Reverse current
Total capacitance
Symbol
VF(1)
VF(2)
VF(3)
IR
Ct
Test Condition
IF = 1 mA
IF = 5 mA
IF = 50 mA
VR = 20 V
VR = 0 V, f = 1 MHz
Min
Typ.
0.33
0.38
0.50
3.9
Max
0.55
0.5
Unit
V
V
V
µA
pF
6.
6.
6.
6. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 6.1
6.1
6.1
6.1 Marking
Marking
Marking
Marking
7.
7.
7.
7. Usage Considerations
Usage Considerations
Usage Considerations
Usage Considerations
•
Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
8.
8.
8.
8. Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
(Unit: mm)
(Unit: mm)
(Unit: mm)
(Unit: mm)
2014-03-11
Rev.1.0



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