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MB9BF412R 데이터시트(PDF) 109 Page - SPANSION

부품명 MB9BF412R
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D a t a S h e e t
106
MB9B410R-DS706-00026-3v0-E, March 11, 2015
CONFIDENTIAL
7.
MainFlash Memory Write/Erase Characteristics
(1) Write / Erase time
(VCC = 2.7V to 5.5V, TA = - 40°C to + 85°C)
Parameter
Value
Unit
Remarks
Typ*
Max*
Sector erase
time
Large Sector
0.7
3.7
s
Includes write time prior to internal
erase
Small Sector
0.3
1.1
Half word (16-bit)
write time
12
384
μs
Not including system-level overhead
time
Chip erase time
8
38.4
s
Includes write time prior to internal
erase
*: The typical value is immediately after shipment, the maximam value is guarantee value under 100,000
cycle of erase/write.
(2) Erase/write cycles and data hold time
Erase/write cycles (cycle)
Data hold time (year)
Remarks
1,000
20*
10,000
10*
100,000
5*
*: At average + 85C
8.
WorkFlash Memory Write/Erase Characteristics
(1) Write / Erase time
(VCC = 2.7V to 5.5V, TA = - 40°C to + 85°C)
Parameter
Value
Unit
Remarks
Typ*
Max*
Sector erase time
0.3
1.5
s
Includes write time prior to internal
erase
Half word (16-bit)
write time
20
384
μs
Not including system-level overhead
time
Chip erase time
1.2
6
s
Includes write time prior to internal
erase
*: The typical value is immediately after shipment, the maximam value is guarantee value under 10,000 cycle
of erase/write.
(2) Erase/write cycles and data hold time
Erase/write cycles (cycle)
Data hold time (year)
Remarks
1,000
20*
10,000
10*
*: At average + 85C



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