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MB91F528 데이터시트(PDF) 224 Page - SPANSION

부품명 MB91F528
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D a t a S h e e t
March 28, 2014, MB91F528_DS705-00016-1v0-E
221
CONFIDENTIAL
6. Flash memory
(1) Electrical Characteristics
Parameter
Value
Unit
Remarks
Min
Typ
Max
Sector erase time
–
200
800
ms
8 Kbytes sector*
1,
excluding internal
preprogramming time
–
300
1100
ms
8 Kbytes sector*
1,
including internal
preprogramming time
–
400
2000
ms
64 Kbytes sector*
1,
excluding internal
preprogramming time
–
700
3700
ms
64 Kbytes sector*
1,
including internal
preprogramming time
8-bit writing time
–
9
288
µs
Exclusive of overhead time at
system level*
1
16-bit writing time
–
12
384
µs
Exclusive of overhead time at
system level*
1
ECC writing time
–
9
288
µs
Exclusive of overhead time at
system level*
1
Erase cycle*
2/
Data retain time
1,000
cycles/
20 years,
10,000
cycles/
10 years,
100,000
cycles/
5 years
–
–
–
Average TA=+85°C*
3
*1: The guaranteed value for erasure up to 100,000 cycles.
*2: Number of erase cycles for each sector.
*3: This value comes from the technology qualification (using Arrhenius equation to translate high temperature
measurements into normalized value at + 85°C).
(2) Notes
While the Flash memory is written or erased, shutdown of the external power (Vcc) is prohibited.
In the application system where Vcc might be shut down while writing or erasing, be sure to turn the
power off by using an external voltage detection function.
To put it concretely, after the external power supply voltage falls below the detection
voltage (VDL
*), hold Vcc at 2.7V or more within the duration calculated by the following expression:
Td
*[µs] + (period of PCLK [µs] × 257) + 50 [µs]
*: See “4.AC Characteristics (8) Low-voltage detection (External low-voltage detection) ”



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