If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage (V

6.5V

Voltage on Any I/O Pin

−0.3V to V

Input Current at Any Pin (Note 3)

Package Input Current (Note 3)

Power Dissipation at T

(Note 4)

ESD Susceptibility (Note 5)

Human Body Model

1500V

Machine Model

200V

Soldering Temp., Infrared, 10 sec. (Note 6)

300˚C

Storage Temperature

−65˚C to +150˚C

Operating Temperature

Range

0˚C

≤ T

V

+4.75V to +5.25V

V

2.7V to V

D

V

1.0V to 3.0V

V

AGND to 0.1V

Digital Inputs

−0.05V to V

|V

≤ 100 mV

|AGND - DGND |

0V to 100 mV

Converter Electrical Characteristics

The following specifications apply for AGND = DGND = DGND I/O = 0V, V

PD = +5V, V

T

Symbol

Parameter

Conditions

Typical

(Note 10)

Limits

(Note 11)

Units

Static Converter Characteristics

Resolution with No

Missing Codes

15

Bits(min)

INL

Integral Non Linearity

At 16 Bits

LSB(max)

DNL

Differential Non Linearity

At 16 Bits

+3

LSB(max)

−2

LSB(min)

Full-Scale Error

3.0

% FS(max)

Zero Offset Error

+0.1

% FS(max)

Reference and Analog Input Characteristics

V

IN

Input Voltage Range

(V

2.0

1.8

2.2

V(min)

V(max)

C

IN

Input Capacitance

V

(CLK

LOW)

12

pF

(CLK

HIGH)

28

pF

V

REF

Reference Voltage

Range [( V

(V

2.00

1.8

V(min)

2.2

V(max)

Reference Input

Resistance

3.5

K

Ω

Dynamic Converter Characteristics

BW

Full Power Bandwidth

8

MHz

SNR

Signal-to-Noise Ratio

f

80

dB

SINAD

Signal-to-Noise &

Distortion

f

79

dB

THD

Total Harmonic

Distortion

f

−88

dB

SFDR

Spurious Free Dynamic

Range

f

91

dB

IMD

Intermodulation

Distortion

f

f

−97

dB

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