C unless otherwise specified

I

S

Continuous Source-Drain Diode Forward Current

--

--

80

A

I

SM

Pulsed Source-Drain Diode Forward Current

--

--

260

V

SD

Source-Drain Diode Forward Voltage

I

--

--

1.3

V

trr

Reverse Recovery Time

I

di

--

70

--

Qrr

Reverse Recovery Charge

--

100

--

nC

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BV

DSS

Drain-Source Breakdown Voltage

V

60

--

--

V

I

DSS

Zero Gate Voltage Drain Current

V

--

--

1

V

--

--

100

I

GSS

Gate-Body Leakage Current

V

20 V, V

--

--

100

Off Characteristics

C

iss

Input Capacitance

V

f = 1.0 MHz

--

4200

--

C

oss

Output Capacitance

--

380

--

C

rss

Reverse Transfer Capacitance

--

300

--

R

g

Gate Resistance

V

--

1.6

--

Dynamic Characteristics

t

d(on)

Turn-On Time

V

R

--

30

--

t

r

Turn-On Rise Time

--

55

--

t

d(off)

Turn-Off Delay Time

--

200

--

t

f

Turn-Off Fall Time

--

50

--

Q

g

Total Gate Charge

V

V

--

100

--

nC

Q

gs

Gate-Source Charge

--

20

--

nC

Q

gd

Gate-Drain Charge

--

25

--

nC

Switching Characteristics

Source-Drain Diode Maximum Ratings and Characteristics

On Characteristics

V

GS

Gate Threshold Voltage

V

1.0

--

2.4

V

R

DS(ON)

Static Drain-Source

On-Resistance

V

--

6.3

8

m

V

--

7.5

10

m

g

FS

Forward Transconductance

V

--

50

--

S

Notes :

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L=1mH, I

, Starting T