HTS6A80AS datasheet(2/4 Pages) SEMIHOW

부품명	HTS6A80AS

상세설명	Repetitive Peak Off-State Voltage

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Thermal Characteristics

Electrical Characteristics (T

J=25

unless otherwise specified )

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IDRM

Repetitive Peak Off-State Current

VD = VDRM

TJ=25oC-

TJ=150oC-

IRRM

Repetitive Peak Reverse Current

VR = VRRM

TJ=25oC-

TJ=150oC-

IGT

Gate Trigger Current

VD = 12V, RL=33

1+, 1-, 3-

VGT

Gate Trigger Voltage

VD = 12V, RL=33

1+, 1-, 3-

1.3

VGD

Non-Trigger Gate Voltage

VD = 2/3VDRM, RL=3.3K ,

TJ=150oC

0.2

Latching Current

IG= 1.2IGT

1+, 3-

Holding Current

IT= 500mA

VTM

Peak On-State Voltage

IT = 8.5A, tp = 380uS

1.5

dv/dt

Critical Rate of Rise of Off-State

Voltage

VD = 2/3 VDRM, Gate open,

TJ=150oC

1200

V/us

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R JC

Thermal Resistance

Junction to Case

3.9

C/W

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