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2SB883 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB883 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn 2 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB883 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, RBE= ∞ -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA, IE= 0 -70 V VCE(sat) Collector-Emitter Saturation Voltage IC= -7A, IB= -14mA -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -7A, IB= -14mA -2.0 V ICBO Collector Cutoff Current VCB= -40V, IE= 0 -100 μ A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA hFE DC Current Gain IC= -7A; VCE= -2V 2000 fT Current-Gain —Bandwidth Product IC= -7A; VCE= -5V 20 MHz |
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