BC856 datasheet(1/2 Pages) DIOTEC

부품명	BC856

상세설명	Surface mount Si-Epitaxial PlanarTransistors

PDF	2 Pages

Scroll/Zoom	100%

제조업체	DIOTEC [Diotec Semiconductor]

홈페이지	http://www.diotec.com

Logo

1 / 2 page

1) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

2) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

14

01.11.2003

1.1

2.9 ±0.1

0.4

1

2

3

Type

Code

1.9

BC 856 ... BC 860

General Purpose Transistors

PNP

Surface mount Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistoren für die Oberflächenmontage

PNP

Power dissipation – Verlustleistung

250 mW

Plastic case

SOT-23

Kunststoffgehäuse

(TO-236)

Weight approx. – Gewicht ca.

0.01 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Dimensions / Maße in mm

1 = B

2 = E

3 = C

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (T

A = 25

/C)

Grenzwerte (T

A = 25

/C)

BC 856

BC 857/860

BC 858/859

Collector-Emitter-voltage

B open

- V

CE0

65 V

45 V

30 V

Collector-Base-voltage

E open

- V

CB0

80 V

50 V

30 V

Emitter-Base-voltage

C open

- V

EB0

5 V

Power dissipation – Verlustleistung

P

tot

250 mW 1)

Collector current – Kollektorstrom (DC)

- I

C

100 mA

Peak Collector current – Kollektor-Spitzenstrom

- I

CM

200 mA

Peak Base current – Basis-Spitzenstrom

- I

BM

200 mA

Peak Emitter current – Emitter-Spitzenstrom

I

EM

200 mA

Junction temperature – Sperrschichttemperatur

T

j

150

/C

Storage temperature – Lagerungstemperatur

T

S

- 65…+ 150

/C

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Group A

Group B

Group C

DC current gain – Kollektor-Basis-Stromverhältnis 2)

- V

CE = 5 V, - IC = 10

:Ah

FE

typ. 90

typ. 150

typ. 270

- V

CE = 5 V, - IC = 2 mA

h

FE

110...220

200...450

420...800

h-Parameters at - V

CE = 5V, - IC = 2 mA, f = 1 kHz

Small signal current gain

Kleinsignal-Stromverstärkung

h

fe

typ. 220

typ. 330

typ. 600

Input impedance – Eingangs-Impedanz

h

ie

1.6...4.5 k

S

3.2...8.5 k

S

6...15 k

S

Output admittance – Ausgangs-Leitwert

h

oe

18 < 30

:S

30 < 60

:S

60 < 110

:S

Reverse voltage transfer ratio

Spannungsrückwirkung

h

re

typ.1.5 *10-4

typ. 2 *10-4

typ. 3 *10-4

유사한 부품 번호 - BC856

제조업체	부품명	데이터시트	상세설명
NXP Semiconductors	BC856	47Kb / 8P	PNP general purpose transistors 1999 Apr 12
Fairchild Semiconductor	BC856	68Kb / 5P	Switching and Amplifier Applications
General Semiconductor	BC856	231Kb / 6P	Small Signal Transistors (PNP)
KEC(Korea Electronics)	BC856	247Kb / 3P	EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
AUK corp	BC856	92Kb / 3P	PNP Silicon Transistor (General purpose application Switching application)

More results

유사한 설명 - BC856

제조업체	부품명	데이터시트	상세설명
Diotec Semiconductor	MMBT2222	60Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors
	BC846W	185Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors
	BC856S	73Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors
	BC856W	184Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors
	BCP28	269Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors
	BCW29	180Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors
	BCW67	182Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors
	BF599	171Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors
	BF720	169Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors
	BSV52	178Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors

More results

BC856 데이터시트(PDF) 1 Page - Diotec Semiconductor

BC856 데이터시트(HTML) 1 Page - Diotec Semiconductor

유사한 부품 번호 - BC856

유사한 설명 - BC856

Html Pages

1 2

데이터시트 다운로드

링크 URL