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HMC8038LP4CE 데이터시트(PDF) 3 Page - Analog Devices

부품명 HMC8038LP4CE
상세설명  High Isolation, Silicon SPDT, Nonreflective Switch, 0.1 GHz to 6.0 GHz
PDF  11 Pages
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HMC8038LP4CE 데이터시트(HTML) 3 Page - Analog Devices

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Data Sheet
HMC8038
Rev. A | Page 3 of 11
SPECIFICATIONS
VDD = 3.3 V to 5 V, VCTL = 0 V/VDD, TA = 25°C, 50 Ω system, unless otherwise noted.
Table 1.
Parameter
Test Conditions/Comments
Min
Typ
Max
Unit
INSERTION LOSS
0.1 GHz to 2.0 GHz
0.7
1.0
dB
2.0 GHz to 4.0 GHz
0.8
1.1
dB
4.0 GHz to 6.0 GHz
0.9
1.3
dB
ISOLATION
0.1 GHz to 2.0 GHz
55
70
dB
RFC to RF1/RF2 (Worst Case)
2.0 GHz to 4.0 GHz
50
60
dB
4.0 GHz to 6.0 GHz
40
51
dB
RETURN LOSS
On State
0.1 GHz to 2.0 GHz
24
dB
2.0 GHz to 4.0 GHz
18
dB
4.0 GHz to 6.0 GHz
18
dB
Off State
0.1 GHz to 2.0 GHz
23
dB
2.0 GHz to 4.0 GHz
22
dB
4.0 GHz to 6.0 GHz
16
dB
SWITCHING SPEED
tRISE, tFALL
10%/90% RFOUT
60
ns
tON, tOFF
50% VCTL to 10%/90% RFOUT
150
ns
RF SETTLING TIME
50% VCTL to 0.1 dB margin of final RFOUT
170
ns
INPUT POWER
1 dB Compression (P1dB)
VDD = 3.3 V
34
dB
VDD = 5 V
36
dB
0.1 dB Compression (P0.1dB)
VDD = 3.3 V
33
dB
VDD = 5 V
35
dB
INPUT THIRD-ORDER INTERCEPT (IP3)
Two-tone input power = 14 dBm/tone
60
dBm
RECOMMENDED OPERATING CONDITIONS
Bias Voltage Range (VDD)
3.0
5.4
V
Control Voltage Range (VCTL, EN)
0
VDD
V
Maximum RF Input Power1
TCASE = 105°C
Through Path (5 V/3.3 V)
31/30
dBm
Terminated Path
24
dBm
Hot Switching
24
dBm
TCASE = 85°C
Through Path (5 V/3.3 V)
34/33
dBm
Terminated Path
27
dBm
Hot Switching
27
dBm
TCASE = 25°C
Through Path (5 V/3.3 V)
34/33
dBm
Terminated Path
29
dBm
Hot Switching
27
dBm
TCASE = −40°C
Through Path (5 V/3.3 V)
34/33
dBm
Terminated Path
29
dBm
Hot Switching
27
dBm
Case Temperature Range (TCASE)
−40
+105
°C
1
Exposure to levels between the recommended operating conditions and the absolute maximum rating conditions for extended periods may affect device reliability.



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